STMicroelectronics - SCT10N120

KEY Part #: K6398478

SCT10N120 Pricing (USD) [7552pcs Stock]

  • 1 pcs$5.23111
  • 10 pcs$4.80892
  • 100 pcs$4.06149
  • 500 pcs$3.61299

Part Number:
SCT10N120
Manufacturer:
STMicroelectronics
Detailed description:
MOSFET N-CH 1.2KV TO247-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCRs - Modules, Transistors - Special Purpose, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - RF and Transistors - FETs, MOSFETs - Arrays ...
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We specialize in STMicroelectronics SCT10N120 electronic components. SCT10N120 can be shipped within 24 hours after order. If you have any demands for SCT10N120, Please submit a Request for Quotation here or send us an email:
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ISO-9001-2015
ISO-13485
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SCT10N120 Product Attributes

Part Number : SCT10N120
Manufacturer : STMicroelectronics
Description : MOSFET N-CH 1.2KV TO247-3
Series : -
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 1200V
Current - Continuous Drain (Id) @ 25°C : 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 20V
Rds On (Max) @ Id, Vgs : 690 mOhm @ 6A, 20V
Vgs(th) (Max) @ Id : 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 22nC @ 20V
Vgs (Max) : +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds : 290pF @ 400V
FET Feature : -
Power Dissipation (Max) : 150W (Tc)
Operating Temperature : -55°C ~ 200°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : HiP247™
Package / Case : TO-247-3

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