Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 1.2KV TO247-3
Technology :
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) :
1200V
Current - Continuous Drain (Id) @ 25°C :
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
20V
Rds On (Max) @ Id, Vgs :
690 mOhm @ 6A, 20V
Vgs(th) (Max) @ Id :
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
22nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds :
290pF @ 400V
Power Dissipation (Max) :
150W (Tc)
Operating Temperature :
-55°C ~ 200°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
HiP247™
Package / Case :
TO-247-3