Manufacturer :
Renesas Electronics America Inc.
Description :
MOSFET 2 N-CH 20V 10.1A 4QFN
FET Type :
2 N-Channel (Dual) Common Drain
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
10.1A (Ta)
Rds On (Max) @ Id, Vgs :
13 mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id :
1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
11nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds :
900pF @ 10V
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
4-QFN (2x2)