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  5. NTMFS6H800NT1G

ON Semiconductor - NTMFS6H800NT1G

KEY Part #: K6397268

NTMFS6H800NT1G Pricing (USD) [28162pcs Stock]

  • 1 pcs$1.46343
Part Number:
NTMFS6H800NT1G
Manufacturer:
ON Semiconductor
Detailed description:
TRENCH 8 80V NFET.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Transistors - Special Purpose, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - RF and Diodes - Zener - Arrays ...
Competitive Advantage:
We specialize in ON Semiconductor NTMFS6H800NT1G electronic components. NTMFS6H800NT1G can be shipped within 24 hours after order. If you have any demands for NTMFS6H800NT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTMFS6H800NT1G Product Attributes

Part Number : NTMFS6H800NT1G
Manufacturer : ON Semiconductor
Description : TRENCH 8 80V NFET
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 28A (Ta), 203A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 2.1 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id : 4V @ 330µA
Gate Charge (Qg) (Max) @ Vgs : 85nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 5530pF @ 40V
FET Feature : -
Power Dissipation (Max) : 3.8W (Ta), 200W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 5-DFN (5x6) (8-SOFL)
Package / Case : 8-PowerTDFN, 5 Leads

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