Vishay Siliconix - SI8473EDB-T1-E1

KEY Part #: K6406374

SI8473EDB-T1-E1 Pricing (USD) [1341pcs Stock]

  • 3,000 pcs$0.10093

Part Number:
SI8473EDB-T1-E1
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET P-CH 20V MICROFOOT.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Transistors - FETs, MOSFETs - Single, Thyristors - TRIACs, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Single, Transistors - Special Purpose, Thyristors - SCRs - Modules and Transistors - Bipolar (BJT) - Arrays ...
Competitive Advantage:
We specialize in Vishay Siliconix SI8473EDB-T1-E1 electronic components. SI8473EDB-T1-E1 can be shipped within 24 hours after order. If you have any demands for SI8473EDB-T1-E1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI8473EDB-T1-E1 Product Attributes

Part Number : SI8473EDB-T1-E1
Manufacturer : Vishay Siliconix
Description : MOSFET P-CH 20V MICROFOOT
Series : TrenchFET®
Part Status : Obsolete
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 41 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id : 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : 1.1W (Ta), 2.7W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 4-Microfoot
Package / Case : 4-XFBGA, CSPBGA