HN1C03F-B(TE85L,F) Pricing (USD) [617873pcs Stock]
- 1 pcs$0.05986
- Part Number:
- HN1C03F-B(TE85L,F)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- TRANS 2NPN 20V 0.3A SM6.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Zener - Arrays, Thyristors - DIACs, SIDACs, Diodes - RF, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - JFETs ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage HN1C03F-B(TE85L,F) electronic components. HN1C03F-B(TE85L,F) can be shipped within 24 hours after order. If you have any demands for HN1C03F-B(TE85L,F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HN1C03F-B(TE85L,F) Product Attributes
Part Number :
HN1C03F-B(TE85L,F)
Manufacturer :
Toshiba Semiconductor and Storage
Description :
TRANS 2NPN 20V 0.3A SM6
Series :
-
Part Status :
Active
Transistor Type :
2 NPN (Dual)
Current - Collector (Ic) (Max) :
300mA
Voltage - Collector Emitter Breakdown (Max) :
20V
Vce Saturation (Max) @ Ib, Ic :
100mV @ 3mA, 30mA
Current - Collector Cutoff (Max) :
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce :
350 @ 4mA, 2V
Power - Max :
300mW
Frequency - Transition :
30MHz
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
SC-74, SOT-457
Supplier Device Package :
SM6
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