IXFX360N10T Pricing (USD) [10810pcs Stock]
- 1 pcs$4.21472
- 90 pcs$4.19375
- Part Number:
- IXFX360N10T
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 100V 360A PLUS247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Thyristors - TRIACs, Diodes - Zener - Single, Transistors - JFETs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - Bipolar (BJT) - Single ...
- Competitive Advantage:
- We specialize in IXYS IXFX360N10T electronic components. IXFX360N10T can be shipped within 24 hours after order. If you have any demands for IXFX360N10T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFX360N10T Product Attributes
Part Number :
IXFX360N10T
Manufacturer :
IXYS
Description :
MOSFET N-CH 100V 360A PLUS247
Series :
GigaMOS™ HiPerFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
360A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.9 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id :
5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs :
525nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
33000pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
1250W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PLUS247™-3
Package / Case :
TO-247-3
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