IMBD4448-HE3-08 Pricing (USD) [2097832pcs Stock]
- 1 pcs$0.01763
- 15,000 pcs$0.01631
- Part Number:
- IMBD4448-HE3-08
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Detailed description:
- DIODE GEN PURP 75V 150MA SOT23. Diodes - General Purpose, Power, Switching 750V 150mA 4ns 500mA IFSM
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Arrays, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in Vishay Semiconductor Diodes Division IMBD4448-HE3-08 electronic components. IMBD4448-HE3-08 can be shipped within 24 hours after order. If you have any demands for IMBD4448-HE3-08, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IMBD4448-HE3-08 Product Attributes
Part Number :
IMBD4448-HE3-08
Manufacturer :
Vishay Semiconductor Diodes Division
Description :
DIODE GEN PURP 75V 150MA SOT23
Series :
Automotive, AEC-Q101
Part Status :
Active
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
75V
Current - Average Rectified (Io) :
150mA
Voltage - Forward (Vf) (Max) @ If :
1V @ 10mA
Speed :
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) :
4ns
Current - Reverse Leakage @ Vr :
2.5µA @ 70V
Capacitance @ Vr, F :
-
Mounting Type :
Surface Mount
Package / Case :
TO-236-3, SC-59, SOT-23-3
Supplier Device Package :
SOT-23
Operating Temperature - Junction :
150°C (Max)
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