Microsemi Corporation - 1N6630US

KEY Part #: K6447697

1N6630US Pricing (USD) [3537pcs Stock]

  • 1 pcs$12.24659
  • 100 pcs$7.55184

Part Number:
1N6630US
Manufacturer:
Microsemi Corporation
Detailed description:
DIODE GEN PURP 900V 1.4A D5B. Rectifiers Rectifier
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Diodes - Zener - Single, Thyristors - TRIACs, Transistors - FETs, MOSFETs - Arrays, Thyristors - DIACs, SIDACs, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Diodes - Rectifiers - Arrays ...
Competitive Advantage:
We specialize in Microsemi Corporation 1N6630US electronic components. 1N6630US can be shipped within 24 hours after order. If you have any demands for 1N6630US, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N6630US Product Attributes

Part Number : 1N6630US
Manufacturer : Microsemi Corporation
Description : DIODE GEN PURP 900V 1.4A D5B
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 900V
Current - Average Rectified (Io) : 1.4A
Voltage - Forward (Vf) (Max) @ If : 1.7V @ 3A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 50ns
Current - Reverse Leakage @ Vr : 4µA @ 100V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : E-MELF
Supplier Device Package : D-5B
Operating Temperature - Junction : -65°C ~ 150°C

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