ON Semiconductor - MBR120ESFT3G

KEY Part #: K6435106

MBR120ESFT3G Pricing (USD) [1249117pcs Stock]

  • 1 pcs$0.03261
  • 10,000 pcs$0.03244
  • 30,000 pcs$0.03035
  • 50,000 pcs$0.02791

Part Number:
MBR120ESFT3G
Manufacturer:
ON Semiconductor
Detailed description:
DIODE SCHOTTKY 20V 1A SOD123L.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - RF, Diodes - Zener - Arrays, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
Competitive Advantage:
We specialize in ON Semiconductor MBR120ESFT3G electronic components. MBR120ESFT3G can be shipped within 24 hours after order. If you have any demands for MBR120ESFT3G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MBR120ESFT3G Product Attributes

Part Number : MBR120ESFT3G
Manufacturer : ON Semiconductor
Description : DIODE SCHOTTKY 20V 1A SOD123L
Series : -
Part Status : Active
Diode Type : Schottky
Voltage - DC Reverse (Vr) (Max) : 20V
Current - Average Rectified (Io) : 1A
Voltage - Forward (Vf) (Max) @ If : 530mV @ 1A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 10µA @ 20V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : SOD-123F
Supplier Device Package : SOD-123FL
Operating Temperature - Junction : -65°C ~ 150°C

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