DMT6009LFG-13 Pricing (USD) [179158pcs Stock]
- 1 pcs$0.20645
- 3,000 pcs$0.18272
- Part Number:
- DMT6009LFG-13
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET N-CH 60V 11A POWERDI3333-.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Transistors - JFETs, Power Driver Modules, Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Arrays, Thyristors - SCRs and Diodes - Rectifiers - Single ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMT6009LFG-13 electronic components. DMT6009LFG-13 can be shipped within 24 hours after order. If you have any demands for DMT6009LFG-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMT6009LFG-13 Product Attributes
Part Number :
DMT6009LFG-13
Manufacturer :
Diodes Incorporated
Description :
MOSFET N-CH 60V 11A POWERDI3333-
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
11A (Ta), 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
10 mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id :
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
33.5nC @ 10V
Vgs (Max) :
±16V
Input Capacitance (Ciss) (Max) @ Vds :
1925pF @ 30V
FET Feature :
-
Power Dissipation (Max) :
2.08W (Ta), 19.2W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PowerDI3333-8
Package / Case :
8-PowerWDFN
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