NVMFS5113PLWFT1G Pricing (USD) [71269pcs Stock]
- 1 pcs$0.54864
- Part Number:
- NVMFS5113PLWFT1G
- Manufacturer:
- ON Semiconductor
- Detailed description:
- NFET SO8FL 60V 69A 16MOHM.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Power Driver Modules, Thyristors - SCRs - Modules, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Single, Thyristors - SCRs and Transistors - Programmable Unijunction ...
- Competitive Advantage:
- We specialize in ON Semiconductor NVMFS5113PLWFT1G electronic components. NVMFS5113PLWFT1G can be shipped within 24 hours after order. If you have any demands for NVMFS5113PLWFT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NVMFS5113PLWFT1G Product Attributes
Part Number :
NVMFS5113PLWFT1G
Manufacturer :
ON Semiconductor
Description :
NFET SO8FL 60V 69A 16MOHM
Series :
Automotive, AEC-Q101
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
10A (Ta), 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
14 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
83nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4400pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
3.8W (Ta), 150W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
5-DFN (5x6) (8-SOFL)
Package / Case :
8-PowerTDFN, 5 Leads
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