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  5. APT100GN60B2G

Microsemi Corporation - APT100GN60B2G

KEY Part #: K6421956

APT100GN60B2G Pricing (USD) [9905pcs Stock]

  • 1 pcs$5.07246
  • 10 pcs$4.56653
  • 25 pcs$4.16056
  • 100 pcs$3.75468
  • 250 pcs$3.45024
  • 500 pcs$3.14581
Part Number:
APT100GN60B2G
Manufacturer:
Microsemi Corporation
Detailed description:
IGBT 600V 229A 625W TMAX.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Arrays, Transistors - Programmable Unijunction, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Single, Pre-Biased and Diodes - Zener - Arrays ...
Competitive Advantage:
We specialize in Microsemi Corporation APT100GN60B2G electronic components. APT100GN60B2G can be shipped within 24 hours after order. If you have any demands for APT100GN60B2G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT100GN60B2G Product Attributes

Part Number : APT100GN60B2G
Manufacturer : Microsemi Corporation
Description : IGBT 600V 229A 625W TMAX
Series : -
Part Status : Active
IGBT Type : Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 229A
Current - Collector Pulsed (Icm) : 300A
Vce(on) (Max) @ Vge, Ic : 1.85V @ 15V, 100A
Power - Max : 625W
Switching Energy : 4.7mJ (on), 2.675mJ (off)
Input Type : Standard
Gate Charge : 600nC
Td (on/off) @ 25°C : 31ns/310ns
Test Condition : 400V, 100A, 1 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Variant
Supplier Device Package : -

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