Toshiba Semiconductor and Storage - RN1910FE(T5L,F,T)

KEY Part #: K6530090

[1948pcs Stock]


    Part Number:
    RN1910FE(T5L,F,T)
    Manufacturer:
    Toshiba Semiconductor and Storage
    Detailed description:
    TRANS 2NPN PREBIAS 0.1W ES6.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - RF, Thyristors - SCRs, Transistors - FETs, MOSFETs - Single, Transistors - JFETs, Thyristors - DIACs, SIDACs and Transistors - Bipolar (BJT) - Arrays ...
    Competitive Advantage:
    We specialize in Toshiba Semiconductor and Storage RN1910FE(T5L,F,T) electronic components. RN1910FE(T5L,F,T) can be shipped within 24 hours after order. If you have any demands for RN1910FE(T5L,F,T), Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    RN1910FE(T5L,F,T) Product Attributes

    Part Number : RN1910FE(T5L,F,T)
    Manufacturer : Toshiba Semiconductor and Storage
    Description : TRANS 2NPN PREBIAS 0.1W ES6
    Series : -
    Part Status : Active
    Transistor Type : 2 NPN - Pre-Biased (Dual)
    Current - Collector (Ic) (Max) : 100mA
    Voltage - Collector Emitter Breakdown (Max) : 50V
    Resistor - Base (R1) : 4.7 kOhms
    Resistor - Emitter Base (R2) : -
    DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
    Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
    Current - Collector Cutoff (Max) : 100nA (ICBO)
    Frequency - Transition : 250MHz
    Power - Max : 100mW
    Mounting Type : Surface Mount
    Package / Case : SOT-563, SOT-666
    Supplier Device Package : ES6

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