Vishay Semiconductor Diodes Division - ES3BHE3_A/I

KEY Part #: K6457012

ES3BHE3_A/I Pricing (USD) [300905pcs Stock]

  • 1 pcs$0.12292
  • 3,500 pcs$0.11140

Part Number:
ES3BHE3_A/I
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 100V 3A DO214AB. Rectifiers 100 Volt 3.0A 20ns Glass Passivated
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Transistors - JFETs, Transistors - Bipolar (BJT) - Single, Thyristors - SCRs - Modules, Diodes - RF, Transistors - IGBTs - Modules, Diodes - Bridge Rectifiers and Power Driver Modules ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division ES3BHE3_A/I electronic components. ES3BHE3_A/I can be shipped within 24 hours after order. If you have any demands for ES3BHE3_A/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ES3BHE3_A/I Product Attributes

Part Number : ES3BHE3_A/I
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 100V 3A DO214AB
Series : Automotive, AEC-Q101
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Current - Average Rectified (Io) : 3A
Voltage - Forward (Vf) (Max) @ If : 900mV @ 3A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 30ns
Current - Reverse Leakage @ Vr : 10µA @ 100V
Capacitance @ Vr, F : 45pF @ 4V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-214AB, SMC
Supplier Device Package : DO-214AB (SMC)
Operating Temperature - Junction : -55°C ~ 150°C

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