JANTXV1N5806 Pricing (USD) [6290pcs Stock]
- 1 pcs$6.55167
- 139 pcs$5.96654
- Part Number:
- JANTXV1N5806
- Manufacturer:
- Microsemi Corporation
- Detailed description:
- DIODE GEN PURP 150V 1A AXIAL. ESD Suppressors / TVS Diodes D MET 2.5A SFST 150V HRV 2FFTV
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - RF, Transistors - Special Purpose, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - RF and Thyristors - SCRs - Modules ...
- Competitive Advantage:
- We specialize in Microsemi Corporation JANTXV1N5806 electronic components. JANTXV1N5806 can be shipped within 24 hours after order. If you have any demands for JANTXV1N5806, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
JANTXV1N5806 Product Attributes
Part Number :
JANTXV1N5806
Manufacturer :
Microsemi Corporation
Description :
DIODE GEN PURP 150V 1A AXIAL
Series :
Military, MIL-PRF-19500/477
Part Status :
Active
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
150V
Current - Average Rectified (Io) :
1A
Voltage - Forward (Vf) (Max) @ If :
875mV @ 1A
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
25ns
Current - Reverse Leakage @ Vr :
1µA @ 150V
Capacitance @ Vr, F :
25pF @ 10V, 1MHz
Mounting Type :
Through Hole
Package / Case :
A, Axial
Supplier Device Package :
-
Operating Temperature - Junction :
-65°C ~ 175°C
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