Vishay Semiconductor Diodes Division - VS-GB100TP120N

KEY Part #: K6533280

VS-GB100TP120N Pricing (USD) [881pcs Stock]

  • 1 pcs$52.66446
  • 24 pcs$40.67562

Part Number:
VS-GB100TP120N
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
IGBT 1200V 200A 650W INT-A-PAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - RF, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Arrays and Transistors - Programmable Unijunction ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division VS-GB100TP120N electronic components. VS-GB100TP120N can be shipped within 24 hours after order. If you have any demands for VS-GB100TP120N, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-GB100TP120N Product Attributes

Part Number : VS-GB100TP120N
Manufacturer : Vishay Semiconductor Diodes Division
Description : IGBT 1200V 200A 650W INT-A-PAK
Series : -
Part Status : Active
IGBT Type : -
Configuration : Half Bridge
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 200A
Power - Max : 650W
Vce(on) (Max) @ Vge, Ic : 2.2V @ 15V, 100A
Current - Collector Cutoff (Max) : 5mA
Input Capacitance (Cies) @ Vce : 7.43nF @ 25V
Input : Standard
NTC Thermistor : No
Operating Temperature : 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : INT-A-Pak
Supplier Device Package : INT-A-PAK

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