Part Number :
VS-GB100TP120N
Manufacturer :
Vishay Semiconductor Diodes Division
Description :
IGBT 1200V 200A 650W INT-A-PAK
Configuration :
Half Bridge
Voltage - Collector Emitter Breakdown (Max) :
1200V
Current - Collector (Ic) (Max) :
200A
Vce(on) (Max) @ Vge, Ic :
2.2V @ 15V, 100A
Current - Collector Cutoff (Max) :
5mA
Input Capacitance (Cies) @ Vce :
7.43nF @ 25V
Operating Temperature :
150°C (TJ)
Mounting Type :
Chassis Mount
Package / Case :
INT-A-Pak
Supplier Device Package :
INT-A-PAK