SI8429DB-T1-E1 Pricing (USD) [202426pcs Stock]
- 1 pcs$0.18363
- 3,000 pcs$0.18272
- Part Number:
- SI8429DB-T1-E1
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET P-CH 8V 11.7A 2X2 4-MFP.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - RF, Thyristors - SCRs, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Arrays, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Diodes - Bridge Rectifiers ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SI8429DB-T1-E1 electronic components. SI8429DB-T1-E1 can be shipped within 24 hours after order. If you have any demands for SI8429DB-T1-E1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI8429DB-T1-E1 Product Attributes
Part Number :
SI8429DB-T1-E1
Manufacturer :
Vishay Siliconix
Description :
MOSFET P-CH 8V 11.7A 2X2 4-MFP
Series :
TrenchFET®
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
8V
Current - Continuous Drain (Id) @ 25°C :
11.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
1.2V, 4.5V
Rds On (Max) @ Id, Vgs :
35 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id :
800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
26nC @ 5V
Vgs (Max) :
±5V
Input Capacitance (Ciss) (Max) @ Vds :
1640pF @ 4V
FET Feature :
-
Power Dissipation (Max) :
2.77W (Ta), 6.25W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
4-Microfoot
Package / Case :
4-XFBGA, CSPBGA
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