[12484pcs Stock]
- Part Number:
- PH3830L,115
- Manufacturer:
- NXP USA Inc.
- Detailed description:
- MOSFET N-CH 30V 98A LFPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Diodes - Bridge Rectifiers, Thyristors - DIACs, SIDACs, Transistors - Special Purpose, Transistors - FETs, MOSFETs - RF, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in NXP USA Inc. PH3830L,115 electronic components. PH3830L,115 can be shipped within 24 hours after order. If you have any demands for PH3830L,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PH3830L,115 Product Attributes
Part Number :
PH3830L,115
Manufacturer :
NXP USA Inc.
Description :
MOSFET N-CH 30V 98A LFPAK
Series :
TrenchMOS™
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
98A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
5V, 10V
Rds On (Max) @ Id, Vgs :
3.8 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id :
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
33nC @ 5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3190pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
62.5W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
LFPAK56, Power-SO8
Package / Case :
SC-100, SOT-669
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