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GeneSiC Semiconductor - MBR20030CTR

KEY Part #: K6468985

MBR20030CTR Pricing (USD) [1317pcs Stock]

  • 1 pcs$32.85075
  • 25 pcs$22.84681
Part Number:
MBR20030CTR
Manufacturer:
GeneSiC Semiconductor
Detailed description:
DIODE MODULE 30V 200A 2TOWER. Schottky Diodes & Rectifiers 30V 200A Schottky Recovery
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Transistors - Special Purpose, Diodes - Rectifiers - Arrays, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
Competitive Advantage:
We specialize in GeneSiC Semiconductor MBR20030CTR electronic components. MBR20030CTR can be shipped within 24 hours after order. If you have any demands for MBR20030CTR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MBR20030CTR Product Attributes

Part Number : MBR20030CTR
Manufacturer : GeneSiC Semiconductor
Description : DIODE MODULE 30V 200A 2TOWER
Series : -
Part Status : Active
Diode Configuration : 1 Pair Common Anode
Diode Type : Schottky
Voltage - DC Reverse (Vr) (Max) : 30V
Current - Average Rectified (Io) (per Diode) : 200A (DC)
Voltage - Forward (Vf) (Max) @ If : 650mV @ 100A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 5mA @ 20V
Operating Temperature - Junction : -55°C ~ 150°C
Mounting Type : Chassis Mount
Package / Case : Twin Tower
Supplier Device Package : Twin Tower
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