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  5. JANTXV1N5416US

Microsemi Corporation - JANTXV1N5416US

KEY Part #: K6433303

JANTXV1N5416US Pricing (USD) [6017pcs Stock]

  • 1 pcs$7.61973
  • 109 pcs$7.58182
Part Number:
JANTXV1N5416US
Manufacturer:
Microsemi Corporation
Detailed description:
DIODE GEN PURP 100V 3A D5B. Diodes - General Purpose, Power, Switching Rectifier
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Single, Diodes - RF, Transistors - JFETs, Transistors - FETs, MOSFETs - Single, Diodes - Rectifiers - Single and Transistors - IGBTs - Arrays ...
Competitive Advantage:
We specialize in Microsemi Corporation JANTXV1N5416US electronic components. JANTXV1N5416US can be shipped within 24 hours after order. If you have any demands for JANTXV1N5416US, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JANTXV1N5416US Product Attributes

Part Number : JANTXV1N5416US
Manufacturer : Microsemi Corporation
Description : DIODE GEN PURP 100V 3A D5B
Series : Military, MIL-PRF-19500/411
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Current - Average Rectified (Io) : 3A
Voltage - Forward (Vf) (Max) @ If : 1.5V @ 9A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 150ns
Current - Reverse Leakage @ Vr : 1µA @ 100V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : SQ-MELF, B
Supplier Device Package : D-5B
Operating Temperature - Junction : -65°C ~ 175°C

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