DMG4N60SK3-13 Pricing (USD) [2763pcs Stock]
- 2,500 pcs$0.14509
- Part Number:
- DMG4N60SK3-13
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET BVDSS 501V 650V TO252 T.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Diodes - RF, Transistors - Special Purpose, Diodes - Zener - Single, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Modules and Diodes - Rectifiers - Single ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMG4N60SK3-13 electronic components. DMG4N60SK3-13 can be shipped within 24 hours after order. If you have any demands for DMG4N60SK3-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMG4N60SK3-13 Product Attributes
Part Number :
DMG4N60SK3-13
Manufacturer :
Diodes Incorporated
Description :
MOSFET BVDSS 501V 650V TO252 T
Series :
-
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
3.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.3 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
14.3nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
532pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
48W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-252
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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