IXFB82N60Q3 Pricing (USD) [3541pcs Stock]
- 1 pcs$14.13668
- 50 pcs$14.06634
- Part Number:
- IXFB82N60Q3
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 600V 82A PLUS264.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Single, Thyristors - SCRs - Modules, Transistors - FETs, MOSFETs - RF, Transistors - JFETs and Transistors - Bipolar (BJT) - Arrays ...
- Competitive Advantage:
- We specialize in IXYS IXFB82N60Q3 electronic components. IXFB82N60Q3 can be shipped within 24 hours after order. If you have any demands for IXFB82N60Q3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFB82N60Q3 Product Attributes
Part Number :
IXFB82N60Q3
Manufacturer :
IXYS
Description :
MOSFET N-CH 600V 82A PLUS264
Series :
HiPerFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
82A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
75 mOhm @ 41A, 10V
Vgs(th) (Max) @ Id :
6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs :
275nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
13500pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
1560W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PLUS264™
Package / Case :
TO-264-3, TO-264AA
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