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  5. JAN1N5809US

Microsemi Corporation - JAN1N5809US

KEY Part #: K6428074

JAN1N5809US Pricing (USD) [8882pcs Stock]

  • 1 pcs$4.66293
  • 100 pcs$4.63973
Part Number:
JAN1N5809US
Manufacturer:
Microsemi Corporation
Detailed description:
DIODE GEN PURP 100V 6A B-MELF. Rectifiers MIL, QPL PART, 3A 100V ULTRAFAST RECT- SQ END CAPS
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Modules, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Arrays, Thyristors - SCRs, Diodes - Bridge Rectifiers and Transistors - Bipolar (BJT) - Arrays ...
Competitive Advantage:
We specialize in Microsemi Corporation JAN1N5809US electronic components. JAN1N5809US can be shipped within 24 hours after order. If you have any demands for JAN1N5809US, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JAN1N5809US Product Attributes

Part Number : JAN1N5809US
Manufacturer : Microsemi Corporation
Description : DIODE GEN PURP 100V 6A B-MELF
Series : Military, MIL-PRF-19500/477
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Current - Average Rectified (Io) : 6A
Voltage - Forward (Vf) (Max) @ If : 875mV @ 4A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 30ns
Current - Reverse Leakage @ Vr : 5µA @ 100V
Capacitance @ Vr, F : 60pF @ 10V, 1MHz
Mounting Type : Surface Mount
Package / Case : SQ-MELF, B
Supplier Device Package : B, SQ-MELF
Operating Temperature - Junction : -65°C ~ 175°C

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