Infineon Technologies - FS150R17N3E4B11BOSA1

KEY Part #: K6534110

FS150R17N3E4B11BOSA1 Pricing (USD) [472pcs Stock]

  • 1 pcs$98.10253

Part Number:
FS150R17N3E4B11BOSA1
Manufacturer:
Infineon Technologies
Detailed description:
IGBT MODULE VCES 650V 150A.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Programmable Unijunction, Diodes - RF, Transistors - FETs, MOSFETs - RF, Transistors - Special Purpose and Transistors - IGBTs - Single ...
Competitive Advantage:
We specialize in Infineon Technologies FS150R17N3E4B11BOSA1 electronic components. FS150R17N3E4B11BOSA1 can be shipped within 24 hours after order. If you have any demands for FS150R17N3E4B11BOSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FS150R17N3E4B11BOSA1 Product Attributes

Part Number : FS150R17N3E4B11BOSA1
Manufacturer : Infineon Technologies
Description : IGBT MODULE VCES 650V 150A
Series : -
Part Status : Active
IGBT Type : Trench Field Stop
Configuration : Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max) : 1700V
Current - Collector (Ic) (Max) : 150A
Power - Max : 835W
Vce(on) (Max) @ Vge, Ic : 2.3V @ 15V, 150A
Current - Collector Cutoff (Max) : 1mA
Input Capacitance (Cies) @ Vce : 13.5nF @ 25V
Input : Standard
NTC Thermistor : Yes
Operating Temperature : -40°C ~ 150°C
Mounting Type : Chassis Mount
Package / Case : Module
Supplier Device Package : Module

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