Part Number :
GT50J121(Q)
Manufacturer :
Toshiba Semiconductor and Storage
Description :
IGBT 600V 50A 240W TO3P LH
Voltage - Collector Emitter Breakdown (Max) :
600V
Current - Collector (Ic) (Max) :
50A
Current - Collector Pulsed (Icm) :
100A
Vce(on) (Max) @ Vge, Ic :
2.45V @ 15V, 50A
Switching Energy :
1.3mJ (on), 1.34mJ (off)
Td (on/off) @ 25°C :
90ns/300ns
Test Condition :
300V, 50A, 13 Ohm, 15V
Reverse Recovery Time (trr) :
-
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-3P(LH)