RS1JLHMTG Pricing (USD) [2000457pcs Stock]
- 1 pcs$0.01849
- Part Number:
- RS1JLHMTG
- Manufacturer:
- Taiwan Semiconductor Corporation
- Detailed description:
- DIODE GEN PURP 600V 800MA SUBSMA.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Thyristors - SCRs, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - RF, Thyristors - DIACs, SIDACs, Power Driver Modules, Transistors - FETs, MOSFETs - Single and Transistors - Special Purpose ...
- Competitive Advantage:
- We specialize in Taiwan Semiconductor Corporation RS1JLHMTG electronic components. RS1JLHMTG can be shipped within 24 hours after order. If you have any demands for RS1JLHMTG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RS1JLHMTG Product Attributes
Part Number :
RS1JLHMTG
Manufacturer :
Taiwan Semiconductor Corporation
Description :
DIODE GEN PURP 600V 800MA SUBSMA
Series :
Automotive, AEC-Q101
Part Status :
Active
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
600V
Current - Average Rectified (Io) :
800mA
Voltage - Forward (Vf) (Max) @ If :
1.3V @ 800mA
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
250ns
Current - Reverse Leakage @ Vr :
5µA @ 600V
Capacitance @ Vr, F :
10pF @ 4V, 1MHz
Mounting Type :
Surface Mount
Package / Case :
DO-219AB
Supplier Device Package :
Sub SMA
Operating Temperature - Junction :
-55°C ~ 150°C
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