VS-GB50TP120N Pricing (USD) [1278pcs Stock]
- 1 pcs$33.87746
- 24 pcs$32.26421
- Part Number:
- VS-GB50TP120N
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Detailed description:
- IGBT 1200V 100A 446W INT-A-PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - RF, Diodes - Bridge Rectifiers, Transistors - Special Purpose and Thyristors - DIACs, SIDACs ...
- Competitive Advantage:
- We specialize in Vishay Semiconductor Diodes Division VS-GB50TP120N electronic components. VS-GB50TP120N can be shipped within 24 hours after order. If you have any demands for VS-GB50TP120N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VS-GB50TP120N Product Attributes
Part Number :
VS-GB50TP120N
Manufacturer :
Vishay Semiconductor Diodes Division
Description :
IGBT 1200V 100A 446W INT-A-PAK
Series :
-
Part Status :
Active
IGBT Type :
-
Configuration :
Half Bridge
Voltage - Collector Emitter Breakdown (Max) :
1200V
Current - Collector (Ic) (Max) :
100A
Power - Max :
446W
Vce(on) (Max) @ Vge, Ic :
2.15V @ 15V, 50A
Current - Collector Cutoff (Max) :
5mA
Input Capacitance (Cies) @ Vce :
4.29nF @ 25V
Input :
Standard
NTC Thermistor :
No
Operating Temperature :
150°C (TJ)
Mounting Type :
Chassis Mount
Package / Case :
INT-A-PAK (3 + 4)
Supplier Device Package :
INT-A-PAK
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