ON Semiconductor - FQPF6N80CT

KEY Part #: K6399143

FQPF6N80CT Pricing (USD) [39626pcs Stock]

  • 1 pcs$0.72331
  • 10 pcs$0.65140
  • 100 pcs$0.52363
  • 500 pcs$0.40725

Part Number:
FQPF6N80CT
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 800V 5.5A TO-220F.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - SCRs - Modules, Transistors - IGBTs - Single, Thyristors - SCRs, Diodes - Zener - Arrays, Diodes - Zener - Single and Diodes - Bridge Rectifiers ...
Competitive Advantage:
We specialize in ON Semiconductor FQPF6N80CT electronic components. FQPF6N80CT can be shipped within 24 hours after order. If you have any demands for FQPF6N80CT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FQPF6N80CT Product Attributes

Part Number : FQPF6N80CT
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 800V 5.5A TO-220F
Series : QFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 800V
Current - Continuous Drain (Id) @ 25°C : 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2.5 Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 30nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1310pF @ 25V
FET Feature : -
Power Dissipation (Max) : 51W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220F
Package / Case : TO-220-3 Full Pack

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