IXFP80N25X3 Pricing (USD) [14498pcs Stock]
- 1 pcs$3.12897
- 10 pcs$2.81431
- 100 pcs$2.31381
- 500 pcs$1.93860
- 1,000 pcs$1.68845
- Part Number:
- IXFP80N25X3
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 250V 80A TO220AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Thyristors - SCRs - Modules, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Bridge Rectifiers, Transistors - Special Purpose, Transistors - IGBTs - Modules and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in IXYS IXFP80N25X3 electronic components. IXFP80N25X3 can be shipped within 24 hours after order. If you have any demands for IXFP80N25X3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFP80N25X3 Product Attributes
Part Number :
IXFP80N25X3
Manufacturer :
IXYS
Description :
MOSFET N-CH 250V 80A TO220AB
Series :
HiPerFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
250V
Current - Continuous Drain (Id) @ 25°C :
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
16 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs :
83nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
5430pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
390W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB (IXFP)
Package / Case :
TO-220-3
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