SSM6J512NU,LF Pricing (USD) [717463pcs Stock]
- 1 pcs$0.05699
- 3,000 pcs$0.05671
- Part Number:
- SSM6J512NU,LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET P-CH 12V 10A UDFN6B.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Diodes - Rectifiers - Arrays, Power Driver Modules, Transistors - Bipolar (BJT) - Single, Diodes - Zener - Arrays, Diodes - RF, Thyristors - SCRs - Modules and Transistors - FETs, MOSFETs - Arrays ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage SSM6J512NU,LF electronic components. SSM6J512NU,LF can be shipped within 24 hours after order. If you have any demands for SSM6J512NU,LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM6J512NU,LF Product Attributes
Part Number :
SSM6J512NU,LF
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET P-CH 12V 10A UDFN6B
Series :
U-MOSVII
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
12V
Current - Continuous Drain (Id) @ 25°C :
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 8V
Rds On (Max) @ Id, Vgs :
16.2 mOhm @ 4A, 8V
Vgs(th) (Max) @ Id :
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
19.5nC @ 4.5V
Vgs (Max) :
±10V
Input Capacitance (Ciss) (Max) @ Vds :
1400pF @ 6V
FET Feature :
-
Power Dissipation (Max) :
1.25W (Ta)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
6-UDFNB (2x2)
Package / Case :
6-WDFN Exposed Pad
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