SQS407ENW-T1_GE3 Pricing (USD) [208654pcs Stock]
- 1 pcs$0.17727
- Part Number:
- SQS407ENW-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET P-CH 30V PPAK 1212-8W.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Thyristors - SCRs, Transistors - IGBTs - Modules, Diodes - RF, Transistors - JFETs, Power Driver Modules, Transistors - IGBTs - Arrays and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SQS407ENW-T1_GE3 electronic components. SQS407ENW-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQS407ENW-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQS407ENW-T1_GE3 Product Attributes
Part Number :
SQS407ENW-T1_GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET P-CH 30V PPAK 1212-8W
Series :
Automotive, AEC-Q101, TrenchFET®
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
10.8 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
77nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4572pF @ 20V
FET Feature :
-
Power Dissipation (Max) :
62.5W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PowerPAK® 1212-8W
Package / Case :
PowerPAK® 1212-8W
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