STQ1HNK60R-AP Pricing (USD) [382562pcs Stock]
- 1 pcs$0.09668
- 2,000 pcs$0.08699
- Part Number:
- STQ1HNK60R-AP
- Manufacturer:
- STMicroelectronics
- Detailed description:
- MOSFET N-CH 600V 400MA TO-92.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - RF, Transistors - IGBTs - Arrays, Diodes - Bridge Rectifiers, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Zener - Single, Transistors - IGBTs - Single and Diodes - Rectifiers - Single ...
- Competitive Advantage:
- We specialize in STMicroelectronics STQ1HNK60R-AP electronic components. STQ1HNK60R-AP can be shipped within 24 hours after order. If you have any demands for STQ1HNK60R-AP, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STQ1HNK60R-AP Product Attributes
Part Number :
STQ1HNK60R-AP
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 600V 400MA TO-92
Series :
SuperMESH™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
400mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
8.5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id :
3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
10nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
156pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
3W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-92-3
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
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