STB6N65M2 Pricing (USD) [83828pcs Stock]
- 1 pcs$0.46644
- 1,000 pcs$0.41680
- Part Number:
- STB6N65M2
- Manufacturer:
- STMicroelectronics
- Detailed description:
- MOSFET N-CH 650V 4A D2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Transistors - Bipolar (BJT) - RF, Transistors - Programmable Unijunction, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, Diodes - Rectifiers - Single, Diodes - RF and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in STMicroelectronics STB6N65M2 electronic components. STB6N65M2 can be shipped within 24 hours after order. If you have any demands for STB6N65M2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STB6N65M2 Product Attributes
Part Number :
STB6N65M2
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 650V 4A D2PAK
Series :
MDmesh™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.35 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
9.8nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
226pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
60W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D2PAK
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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