DMN2065UW-7 Pricing (USD) [885618pcs Stock]
- 1 pcs$0.04176
- 3,000 pcs$0.03828
- Part Number:
- DMN2065UW-7
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET N CH 20V 2.8A SOT323.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Single, Transistors - JFETs, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Special Purpose, Thyristors - SCRs and Transistors - Bipolar (BJT) - RF ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMN2065UW-7 electronic components. DMN2065UW-7 can be shipped within 24 hours after order. If you have any demands for DMN2065UW-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN2065UW-7 Product Attributes
Part Number :
DMN2065UW-7
Manufacturer :
Diodes Incorporated
Description :
MOSFET N CH 20V 2.8A SOT323
Series :
-
Part Status :
Not For New Designs
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.5V, 4.5V
Rds On (Max) @ Id, Vgs :
56 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
5.4nC @ 4.5V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
400pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
430mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SOT-323
Package / Case :
SC-70, SOT-323
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