[12691pcs Stock]
- Part Number:
- IRFB23N20D
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 200V 24A TO-220AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Diodes - RF, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Arrays and Transistors - FETs, MOSFETs - Single ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRFB23N20D electronic components. IRFB23N20D can be shipped within 24 hours after order. If you have any demands for IRFB23N20D, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFB23N20D Product Attributes
Part Number :
IRFB23N20D
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 200V 24A TO-220AB
Series :
HEXFET®
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
200V
Current - Continuous Drain (Id) @ 25°C :
24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
100 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
86nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1960pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
3.8W (Ta), 170W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
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