Vishay Siliconix - SI8401DB-T1-E3

KEY Part #: K6396470

SI8401DB-T1-E3 Pricing (USD) [79734pcs Stock]

  • 1 pcs$0.49039
  • 3,000 pcs$0.45945

Part Number:
SI8401DB-T1-E3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET P-CH 20V 3.6A 2X2 4-MFP.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - RF, Power Driver Modules, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Special Purpose, Diodes - RF and Transistors - Programmable Unijunction ...
Competitive Advantage:
We specialize in Vishay Siliconix SI8401DB-T1-E3 electronic components. SI8401DB-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI8401DB-T1-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI8401DB-T1-E3 Product Attributes

Part Number : SI8401DB-T1-E3
Manufacturer : Vishay Siliconix
Description : MOSFET P-CH 20V 3.6A 2X2 4-MFP
Series : TrenchFET®
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 65 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id : 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 17nC @ 4.5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : 1.47W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 4-Microfoot
Package / Case : 4-XFBGA, CSPBGA