SI7501DN-T1-GE3 Pricing (USD) [3907pcs Stock]
- 1 pcs$0.53517
- 10 pcs$0.47413
- 100 pcs$0.37487
- 500 pcs$0.27500
- 1,000 pcs$0.21711
- Part Number:
- SI7501DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N/P-CH 30V 5.4A 1212-8.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - JFETs, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - Arrays and Diodes - RF ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SI7501DN-T1-GE3 electronic components. SI7501DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7501DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI7501DN-T1-GE3 Product Attributes
Part Number :
SI7501DN-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N/P-CH 30V 5.4A 1212-8
Series :
TrenchFET®
Part Status :
Obsolete
FET Type :
N and P-Channel, Common Drain
FET Feature :
Logic Level Gate
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
5.4A, 4.5A
Rds On (Max) @ Id, Vgs :
35 mOhm @ 7.7A, 10V
Vgs(th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
-
Power - Max :
1.6W
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
PowerPAK® 1212-8 Dual
Supplier Device Package :
PowerPAK® 1212-8 Dual
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