Vishay Siliconix - IRF614SPBF

KEY Part #: K6399457

IRF614SPBF Pricing (USD) [47472pcs Stock]

  • 1 pcs$0.79857
  • 10 pcs$0.71997
  • 100 pcs$0.57844
  • 500 pcs$0.44991
  • 1,000 pcs$0.37278

Part Number:
IRF614SPBF
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 250V 2.7A D2PAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - JFETs, Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - Arrays and Thyristors - SCRs ...
Competitive Advantage:
We specialize in Vishay Siliconix IRF614SPBF electronic components. IRF614SPBF can be shipped within 24 hours after order. If you have any demands for IRF614SPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF614SPBF Product Attributes

Part Number : IRF614SPBF
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 250V 2.7A D2PAK
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 250V
Current - Continuous Drain (Id) @ 25°C : 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2 Ohm @ 1.6A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 8.2nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 140pF @ 25V
FET Feature : -
Power Dissipation (Max) : 3.1W (Ta), 36W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D2PAK
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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