CSD19533KCS Pricing (USD) [56337pcs Stock]
- 1 pcs$0.76512
- 10 pcs$0.69154
- 100 pcs$0.55570
- 500 pcs$0.43220
- 1,000 pcs$0.33875
- Part Number:
- CSD19533KCS
- Manufacturer:
- Texas Instruments
- Detailed description:
- MOSFET N-CH 100V 86A TO220-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Diodes - RF, Transistors - Bipolar (BJT) - Single, Diodes - Bridge Rectifiers, Transistors - Special Purpose, Thyristors - TRIACs, Transistors - Programmable Unijunction and Thyristors - SCRs ...
- Competitive Advantage:
- We specialize in Texas Instruments CSD19533KCS electronic components. CSD19533KCS can be shipped within 24 hours after order. If you have any demands for CSD19533KCS, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD19533KCS Product Attributes
Part Number :
CSD19533KCS
Manufacturer :
Texas Instruments
Description :
MOSFET N-CH 100V 86A TO220-3
Series :
NexFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
10.5 mOhm @ 55A, 10V
Vgs(th) (Max) @ Id :
3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
35nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2670pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
188W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220-3
Package / Case :
TO-220-3
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