IXFB110N60P3 Pricing (USD) [5131pcs Stock]
- 1 pcs$9.70613
- 10 pcs$8.82309
- 100 pcs$7.13379
- Part Number:
- IXFB110N60P3
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 600V 110A PLUS264.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Single, Thyristors - SCRs, Diodes - Bridge Rectifiers, Thyristors - DIACs, SIDACs and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in IXYS IXFB110N60P3 electronic components. IXFB110N60P3 can be shipped within 24 hours after order. If you have any demands for IXFB110N60P3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFB110N60P3 Product Attributes
Part Number :
IXFB110N60P3
Manufacturer :
IXYS
Description :
MOSFET N-CH 600V 110A PLUS264
Series :
HiPerFET™, Polar3™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
56 mOhm @ 55A, 10V
Vgs(th) (Max) @ Id :
5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs :
245nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
18000pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
1890W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PLUS264™
Package / Case :
TO-264-3, TO-264AA
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