FQP2N60C Pricing (USD) [61934pcs Stock]
- 1 pcs$0.49336
- 10 pcs$0.43859
- 100 pcs$0.32787
- 500 pcs$0.25426
- 1,000 pcs$0.20073
- Part Number:
- FQP2N60C
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 600V 2A TO-220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Diodes - Zener - Arrays, Thyristors - DIACs, SIDACs, Thyristors - TRIACs, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays, Transistors - Special Purpose and Diodes - Bridge Rectifiers ...
- Competitive Advantage:
- We specialize in ON Semiconductor FQP2N60C electronic components. FQP2N60C can be shipped within 24 hours after order. If you have any demands for FQP2N60C, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQP2N60C Product Attributes
Part Number :
FQP2N60C
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 600V 2A TO-220
Series :
QFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
4.7 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
235pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
54W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220-3
Package / Case :
TO-220-3
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