IXFH100N30X3 Pricing (USD) [8948pcs Stock]
- 1 pcs$4.60531
- Part Number:
- IXFH100N30X3
- Manufacturer:
- IXYS
- Detailed description:
- 300V/100A ULTRA JUNCTION X3-CLAS.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Single, Thyristors - TRIACs, Transistors - IGBTs - Modules, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Thyristors - SCRs ...
- Competitive Advantage:
- We specialize in IXYS IXFH100N30X3 electronic components. IXFH100N30X3 can be shipped within 24 hours after order. If you have any demands for IXFH100N30X3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFH100N30X3 Product Attributes
Part Number :
IXFH100N30X3
Manufacturer :
IXYS
Description :
300V/100A ULTRA JUNCTION X3-CLAS
Series :
HiPerFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
300V
Current - Continuous Drain (Id) @ 25°C :
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
13.5 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs :
122nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
7.66nF @ 25V
FET Feature :
-
Power Dissipation (Max) :
480W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247
Package / Case :
TO-247-3
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