STMicroelectronics - STD13NM60ND

KEY Part #: K6417861

STD13NM60ND Pricing (USD) [43856pcs Stock]

  • 1 pcs$0.89154
  • 2,500 pcs$0.78907

Part Number:
STD13NM60ND
Manufacturer:
STMicroelectronics
Detailed description:
MOSFET N-CH 600V 11A DPAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Programmable Unijunction, Power Driver Modules, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - RF and Transistors - JFETs ...
Competitive Advantage:
We specialize in STMicroelectronics STD13NM60ND electronic components. STD13NM60ND can be shipped within 24 hours after order. If you have any demands for STD13NM60ND, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STD13NM60ND Product Attributes

Part Number : STD13NM60ND
Manufacturer : STMicroelectronics
Description : MOSFET N-CH 600V 11A DPAK
Series : FDmesh™ II
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 380 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 24.5nC @ 10V
Vgs (Max) : ±25V
Input Capacitance (Ciss) (Max) @ Vds : 845pF @ 50V
FET Feature : -
Power Dissipation (Max) : 109W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : DPAK
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

You May Also Be Interested In
  • BS107P

    Diodes Incorporated

    MOSFET N-CH 200V 120MA TO92-3.

  • IRFR3607TRPBF

    Infineon Technologies

    MOSFET N-CH 75V 56A DPAK.

  • IXTY2N100P

    IXYS

    MOSFET N-CH 1000V 2A TO-252.

  • TK8A60W,S4VX

    Toshiba Semiconductor and Storage

    MOSFET N CH 600V 8A TO-220SIS.

  • SPA11N60CFDXKSA1

    Infineon Technologies

    MOSFET N-CH 600V 11A TO220-3.

  • IPA65R190E6XKSA1

    Infineon Technologies

    MOSFET N-CH 650V 20.2A TO220.