DMN80H2D0SCTI Pricing (USD) [63360pcs Stock]
- 1 pcs$0.61712
- 50 pcs$0.57949
- Part Number:
- DMN80H2D0SCTI
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET N-CH 800V 7A ITO220AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Zener - Single, Diodes - Rectifiers - Single, Diodes - Variable Capacitance (Varicaps, Varactors) and Thyristors - SCRs - Modules ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMN80H2D0SCTI electronic components. DMN80H2D0SCTI can be shipped within 24 hours after order. If you have any demands for DMN80H2D0SCTI, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN80H2D0SCTI Product Attributes
Part Number :
DMN80H2D0SCTI
Manufacturer :
Diodes Incorporated
Description :
MOSFET N-CH 800V 7A ITO220AB
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
800V
Current - Continuous Drain (Id) @ 25°C :
7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2 Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
35.4nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1253pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
41W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
ITO-220AB
Package / Case :
TO-220-3 Full Pack, Isolated Tab
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