Vishay Semiconductor Diodes Division - ES3B-M3/9AT

KEY Part #: K6457449

ES3B-M3/9AT Pricing (USD) [506643pcs Stock]

  • 1 pcs$0.07704
  • 7,000 pcs$0.07665

Part Number:
ES3B-M3/9AT
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 100V 3A DO214AB. Rectifiers 3A, 100V, 20NS, F.EFF.SMDIODE
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Transistors - Special Purpose, Transistors - IGBTs - Modules, Thyristors - SCRs - Modules, Transistors - IGBTs - Single, Diodes - Bridge Rectifiers, Transistors - IGBTs - Arrays and Transistors - Bipolar (BJT) - Arrays ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division ES3B-M3/9AT electronic components. ES3B-M3/9AT can be shipped within 24 hours after order. If you have any demands for ES3B-M3/9AT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ES3B-M3/9AT Product Attributes

Part Number : ES3B-M3/9AT
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 100V 3A DO214AB
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Current - Average Rectified (Io) : 3A
Voltage - Forward (Vf) (Max) @ If : 900mV @ 3A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 30ns
Current - Reverse Leakage @ Vr : 10µA @ 100V
Capacitance @ Vr, F : 45pF @ 4V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-214AB, SMC
Supplier Device Package : DO-214AB (SMC)
Operating Temperature - Junction : -55°C ~ 150°C

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