Vishay Semiconductor Diodes Division - SE10FJ-M3/I

KEY Part #: K6440123

SE10FJ-M3/I Pricing (USD) [1397927pcs Stock]

  • 1 pcs$0.02792
  • 30,000 pcs$0.02778

Part Number:
SE10FJ-M3/I
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 600V 1A DO219AB. Rectifiers 1A 600V ESD Prot SMF Rectifier
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays, Thyristors - SCRs - Modules, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Thyristors - TRIACs ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division SE10FJ-M3/I electronic components. SE10FJ-M3/I can be shipped within 24 hours after order. If you have any demands for SE10FJ-M3/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SE10FJ-M3/I Product Attributes

Part Number : SE10FJ-M3/I
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 600V 1A DO219AB
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 600V
Current - Average Rectified (Io) : 1A
Voltage - Forward (Vf) (Max) @ If : 1.05V @ 1A
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 780ns
Current - Reverse Leakage @ Vr : 5µA @ 600V
Capacitance @ Vr, F : 7.5pF @ 4V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-219AB
Supplier Device Package : DO-219AB (SMF)
Operating Temperature - Junction : -55°C ~ 175°C

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