FDS6699S Pricing (USD) [143597pcs Stock]
- 1 pcs$0.28757
- 2,500 pcs$0.28614
- Part Number:
- FDS6699S
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 30V 21A 8SOIC.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Thyristors - SCRs - Modules, Transistors - Special Purpose, Diodes - Bridge Rectifiers, Thyristors - DIACs, SIDACs, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Arrays and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
- Competitive Advantage:
- We specialize in ON Semiconductor FDS6699S electronic components. FDS6699S can be shipped within 24 hours after order. If you have any demands for FDS6699S, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDS6699S Product Attributes
Part Number :
FDS6699S
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 30V 21A 8SOIC
Series :
PowerTrench®, SyncFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
21A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
3.6 mOhm @ 21A, 10V
Vgs(th) (Max) @ Id :
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
91nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3610pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
2.5W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-SOIC
Package / Case :
8-SOIC (0.154", 3.90mm Width)
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