DMN26D0UFB4-7 Pricing (USD) [1369073pcs Stock]
- 1 pcs$0.02715
- 3,000 pcs$0.02702
- Part Number:
- DMN26D0UFB4-7
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET N-CH 20V 230MA DFN.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Transistors - IGBTs - Modules, Transistors - JFETs, Transistors - Bipolar (BJT) - RF, Diodes - RF, Transistors - IGBTs - Single, Thyristors - DIACs, SIDACs and Transistors - Bipolar (BJT) - Single ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMN26D0UFB4-7 electronic components. DMN26D0UFB4-7 can be shipped within 24 hours after order. If you have any demands for DMN26D0UFB4-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN26D0UFB4-7 Product Attributes
Part Number :
DMN26D0UFB4-7
Manufacturer :
Diodes Incorporated
Description :
MOSFET N-CH 20V 230MA DFN
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.5V, 4.5V
Rds On (Max) @ Id, Vgs :
3 Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id :
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±10V
Input Capacitance (Ciss) (Max) @ Vds :
14.1pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
350mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
X2-DFN1006-3
Package / Case :
3-XFDFN
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