RZF020P01TL Pricing (USD) [563890pcs Stock]
- 1 pcs$0.07252
- 3,000 pcs$0.07216
- Part Number:
- RZF020P01TL
- Manufacturer:
- Rohm Semiconductor
- Detailed description:
- MOSFET P-CH 12V 2A TUMT3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - TRIACs, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - RF and Thyristors - DIACs, SIDACs ...
- Competitive Advantage:
- We specialize in Rohm Semiconductor RZF020P01TL electronic components. RZF020P01TL can be shipped within 24 hours after order. If you have any demands for RZF020P01TL, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RZF020P01TL Product Attributes
Part Number :
RZF020P01TL
Manufacturer :
Rohm Semiconductor
Description :
MOSFET P-CH 12V 2A TUMT3
Series :
-
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
12V
Current - Continuous Drain (Id) @ 25°C :
2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.5V, 4.5V
Rds On (Max) @ Id, Vgs :
105 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id :
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
6.5nC @ 4.5V
Vgs (Max) :
±10V
Input Capacitance (Ciss) (Max) @ Vds :
770pF @ 6V
FET Feature :
-
Power Dissipation (Max) :
800mW (Ta)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TUMT3
Package / Case :
3-SMD, Flat Leads
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