Toshiba Semiconductor and Storage - SSM6N815R,LF

KEY Part #: K6523154

SSM6N815R,LF Pricing (USD) [622023pcs Stock]

  • 1 pcs$0.05946

Part Number:
SSM6N815R,LF
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET 2N-CH 100V 2A 6TSOPF.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Arrays, Thyristors - DIACs, SIDACs and Diodes - Rectifiers - Arrays ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage SSM6N815R,LF electronic components. SSM6N815R,LF can be shipped within 24 hours after order. If you have any demands for SSM6N815R,LF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SSM6N815R,LF Product Attributes

Part Number : SSM6N815R,LF
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET 2N-CH 100V 2A 6TSOPF
Series : U-MOSVIII-H
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 2A (Ta)
Rds On (Max) @ Id, Vgs : 103 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 3.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 290pF @ 15V
Power - Max : 1.8W (Ta)
Operating Temperature : 150°C
Mounting Type : Surface Mount
Package / Case : 6-SMD, Flat Leads
Supplier Device Package : 6-TSOP-F

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